MATSUSHITA ELECTRONICS CORPORATION;
| Keywords | Device, Junction, Voltage, Semiconductor, Impurity, Substrate, Concentration, Germanium, Invention, Patent |
| Ministry/ Department/ Residency | The Patent Office |
| Branch | Indian Patent File |
| From Year / Date (YYYY-MM-DD) |
1966 |
| To Year / Date (YYYY-MM-DD) |
1966 |
| Source Organization | NA |
| Identifier | NAIBHF00027452 |
| File No./Reference No./Sheet No./Folio No. | 108239 |
| Location | BBSR-R1 |
| Part No. | NA |
| File Size | 42.5 MB |
| Pages | 50 |
| Call Number | NA |
| Publisher | NA |
| Subject | MATSUSHITA ELECTRONICS CORPORATION; |
| Creator | NA |
| Accession Number | NA |
| Series | NA |
| Year of Publication | NA |
| Language | English |
| Bundle Barcode | NAIBHB00000868 |
| Location Code | 0 |
| File Barcode | NAIBHF00027452 |
| QC Certificate No. | QC_20250124BH |
| Bundle No. | 676 |
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