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Heating element for and a method of optically depositing silicon onto a semiconductor device

Keywords	Silicon Carbide Graphite Epitaxial Deposition Silicon Layers Heating Element Rectifier Corporation DePENNING
Ministry/ Department/ Residency	PATENTS AND DESIGNS KOLKATA
Branch	Kolkata
From Year / Date (YYYY-MM-DD)	1963
To Year / Date (YYYY-MM-DD)	1963
Identifier	NAIBHF00011262
File No./Reference No./Sheet No./Folio No.	90849
Location	BBSR-R1
File Size	49.7 MB
Pages	36
Language	English
Bundle Barcode	NAIBHB00000376
File Barcode	NAIBHF00011262
QC Certificate No.	QC_20240713BH
Bundle No.	184

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- Department: PATENTS AND DESIGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1953
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- Department: PATENTS AND DISGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1963
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- Branch: Kolkata
- Year / Date: 1961
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- Department: PATENTS AND DESIGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1961
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- Department: PATENTS AND DISGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1952
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- Department: PATENTS AND DISGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1961
- Patent Application for Method of Adjusting the Per...
- Department: PATENTS AND DISGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1961
- 3 Views
- A method of forming solar grade silicon semiconduc...
- Department: Ministry of Commerce & Industry
- Branch: PATENT
- Year / Date: 1986
- Improvements relating to the sealing of semi-condu...
- Department: PATENTS AND DISGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1961
- Compound semiconductor devices
- Department: PATENTS AND DESIGNS KOLKATA
- Branch: Kolkata
- Year / Date: 1963